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  • HRD+ RAMDISK CONSTRUCTION GUIDE BY BUD MILLS

    Refer to Figure 3 for diode placement. Three diode types are shown: CR3, CR9, and CR10 are 1N914 silicon diodes CR4, CR3, CR6, and CR7 are 1N34A germanium diodes and CR8 is a 1N4004 rectifier diode. Although similar in appearance, the 1N914 silicon diodes are smaller than the 1N34A germanium diodes. Diodes are polar.

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    Refer to Figure 3 for diode placement. Three diode types are shown: CR3, CR9, and CR10 are 1N914 silicon diodes CR4, CR3, CR6, and CR7 are 1N34A germanium diodes and CR8 is a 1N4004 rectifier diode. Although similar in appearance, the 1N914 silicon diodes are smaller than the 1N34A germanium diodes. Diodes are polar.

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    2018415&ensp·&enspSERVICE INFORMATION FROM HEWLETTPACKARD JANUARYFEBRUARY 1975 .f . diode. See Figure 3. The breakdown diode will start drawing current when its break 0.N for germanium) below the bas& Q1 will tend to turn on harder, raising the output voltage.

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    201219&ensp·&ensp– Substitute CR5 (D5) by a modern >5kV silicon diode. I use a Fuji ESJA5320A, 20kV, 0., 5mA diode – Substitute C8 by a modern 0.01uF @ 3kV capacitor. – Substitute C5 by a 0.0022uF @ 3kV capacitor. – Replace R13 by a 1.8MΩ and a 3.3MΩ in series.

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    1973814&ensp·&enspFunctional circuit 44 shown in FIG. 2B is a power failure warning or alarm circuit. Lead a is connected to the positive terminal of a 7.5volt (alkaline) battery 62 through a 12volt Zener diode CR7, an oppositely oriented 10volt Zener diode CR8 and a resistor R26 which are connected in series and constitute a trickle charger for the battery.

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    And diode CR7 switches oof and FAST to protect transistor Q2 from what is about to happen. A violent hard yank negative voltage appears at the base of Q3. No current here. CR13, and CR14 are special germanium diodes. They have a low forward voltage drop (0.45V in my PS). They also can handle about 10Amps of average current.

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    Germanium vs Silicon Diode Testing: Read this document carefully, so you will not be the victim of cheap knockoff or the wrong type diodes. The general rule is that SILICON diodes have a voltage drop across the Anode to Cathode of 0.7 V (7/ 10Germanium is a chemical element with

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  • SERVICE INFORMATION FROM HEWLETTPACKARD

    2018415&ensp·&enspSERVICE INFORMATION FROM HEWLETTPACKARD JANUARYFEBRUARY 1975 .f . diode. See Figure 3. The breakdown diode will start drawing current when its break 0.N for germanium) below the bas& Q1 will tend to turn on harder, raising the output voltage.

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    Affiah Ekectrical Graphics. para más tarde. guardar. Relacionado. Información. Insertar. Compartir. Imprimir. Buscar. devices are generally made of silicon or germanium that is "doped" with impurities A Detector diode, high speed diode, mixer diode B Variable capacitance (varicap) diode

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  • zener How improve temperature sensitivity of HP 721A DC

    20181223&ensp·&enspV.ref is V.zener + V.BE of the Germanium PNP (Q4) basically as a replacement for CR7, the original zener diode: Q4 and R22 were removed. R23 was replaced with a somewhat larger value to maintain the original current through the output voltage sampling circuit. The nowempty emitter and base connections for Q4 were shorted with a wire to

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    An injectionlocked diode laser can be actively stabilized by monitoring either the laser's frequency spectrum or the overall intensity. I used the transmission of a FabryPerot cavity to measure the frequency spectrum of an injectionlocked laser.

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  • zener How improve temperature sensitivity of HP 721A DC

    20181223&ensp·&enspHow improve temperature sensitivity of HP 721A DC Power Supply voltage reference? V.ref is V.zener + V.BE of the Germanium PNP (Q4) I was able to install it on the original circuit board, basically as a replacement for CR7, the original zener diode:

  • Modifiions: Heathkit IG18 Audio Generator

    2018827&ensp·&enspThe diode I actually used (which worked well) came from Radio Shack more than ten years ago and was an unmarked Germanium, as I recall. Shouldn't matter a great deal though and the 1N34A looks like a good match for the forward spec.

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  • US4255706A Broadband voltmeter Google Patents

    diode detector diode connected apparatus Prior art date 19780720 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired Lifetime Appliion number US05926507 Inventor Haig Soojian

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    1972926&ensp·&enspThe invention disclosed is for a new high power transistorized audio amplifier having a circuit characterized by high efficiency, and light weight resulting from a bridge configuration of power transi

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    201915&ensp·&ensp100V Type 1N100 Germanium Switching Diode (CR3, 4,11) 75V Type 1N914 Silicon Switching Diode (CR1, 5) 50V Type 1N4001 Silicon Rectifier Diode (CR710) Type 2N3906 PNP Switching and Amplifying Transistor (Q1, 4, 5,1113) Type 2N3904 NPN 60V 1Watt Transistor (Q2, 3)

  • 2015118&ensp·&enspdiode 2. Operating controls FRONT PANEL VFO tuning . 3. External connection Antenna terminal (co CR7 IN 34A Allband mixer Vea 60K 6 6AW e A Allband osc V8b 6AQ8 SB OSC 6 AQÊ SEA 8 2 95 USB 3403 osc of the four germanium diodes is called a ring modulator, i.e., a highperformance modulator

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